Art
J-GLOBAL ID:200902170584472400   Reference number:02A0778800

Generation of ballistic electrons in nanocrystalline porous silicon layers and its application to a solid-state planar luminescent device.

ナノ結晶多孔質シリコン層におけるバリスティック電子の発生とその固体プレーナルミネセンス素子への応用
Author (3):
Material:
Volume: 81  Issue: 13  Page: 2472-2474  Publication year: Sep. 23, 2002 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=02A0778800&from=J-GLOBAL&jstjournalNo=H0613A") }}
JST classification (3):
JST classification
Category name(code) classified by JST.
Thermoionic emission and field emission  ,  Luminescence of inorganic compounds  ,  Display equipment 
Terms in the title (5):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page