A new generation of high voltage MOSFETs breaks the limit line of silicon.

DEBOY G; MAERZ M; STENGL J-P; STRACK H; TIHANYI J; WEBER H

Art

J-GLOBAL ID：200902171252174584 Reference number：99A0420062

A new generation of high voltage MOSFETs breaks the limit line of silicon.

シリコンの限界線を破る新世代高電圧MOSFET

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Author (6)： , , , , ,
Material：
Volume： 1998 Page： 683-685 Publication year： 1998
JST Material Number： C0829B ISSN： 0163-1918 Document type： Proceedings
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Transistors , Manufacturing technology of solid-state devices

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