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J-GLOBAL ID:200902171810189402   Reference number:02A0393543

Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory.

高密度磁気ランダムアクセスメモリ用の垂直磁化薄膜を用いた磁気トンネル接合素子
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Volume: 91  Issue:Page: 5246-5249  Publication year: Apr. 15, 2002 
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Magnetic materials  ,  Other contacts 
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