Characteristics of 0.25μm Ferroelectric Nonvolatile Memory with a Pb(Zr, Ti)O<sub>3</sub> Capacitor on a Metal/via-Stacked Plug.

AMANUMA K; KOBAYASHI S; TATSUMI T; MAEJIMA Y; HADA H; YAMADA J; MIWA T; KOIKE H; KUNIO T

Art

J-GLOBAL ID：200902171973006003 Reference number：00A0544403

Characteristics of 0.25μm Ferroelectric Nonvolatile Memory with a Pb(Zr, Ti)O₃ Capacitor on a Metal/via-Stacked Plug.

金属/ビア-スタックプラグ上のPb(Zr,Ti)O₃キャパシタを持つ0.25μm強誘電体不揮発性メモリの特性

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=00A0544403&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=00A0544403&from=J-GLOBAL&jstjournalNo=G0520B") }}

Author (9)： , , , , , , , ,
Material：
Volume： 39 Issue： 4B Page： 2098-2101 Publication year： Apr. 30, 2000
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=00A0544403&from=J-GLOBAL&jstjournalNo=G0520B") }}

Semiconductor integrated circuit , Metal-insulator-metal structures

Reference (3)：

AMANUMA, K. Tech.Dig.Int.Electron Devices Meet. 1998, 363
KOBAYASHI, S. IEEE Electron Devices Lett. 1998, 19, 417
MANIAR, P. D. Mater.Res.Symp.Proc. 1993, 310, 151

, , , , , , , ,

Return to Previous Page

Characteristics of 0.25μm Ferroelectric Nonvolatile Memory with a Pb(Zr, Ti)O3 Capacitor on a Metal/via-Stacked Plug.

Characteristics of 0.25μm Ferroelectric Nonvolatile Memory with a Pb(Zr, Ti)O₃ Capacitor on a Metal/via-Stacked Plug.