Art
J-GLOBAL ID：200902173650132355   Reference number：97A0374782

Atomic-layer chemical-vapor-deposition of silicon-nitride.

窒化シリコンの原子層化学蒸着
Author (3)：
MORISHITA S

About MORISHITA S

(Tokyo Inst. Technol., Tokyo, JPN)

About Tokyo Inst. Technol., Tokyo, JPN

, 
SUGAHARA S

About SUGAHARA S

(Tokyo Inst. Technol., Tokyo, JPN)

About Tokyo Inst. Technol., Tokyo, JPN

, 
MATSUMURA M

About MATSUMURA M

(Tokyo Inst. Technol., Tokyo, JPN)

About Tokyo Inst. Technol., Tokyo, JPN


Material：
Applied Surface Science  (Appl Surf Sci)

About Applied Surface Science


Volume： 112  Page： 198-204  Publication year： Mar. 1997 
JST Material Number： B0707B  ISSN： 0169-4332  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)
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atomic layer epitaxy

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,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
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原子層蒸着

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JST classification (1)：
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Semiconductor thin films 
(BK14040E)

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窒化シリコン

About 窒化シリコン

, 
原子層化学蒸着

About 原子層化学蒸着


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