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J-GLOBAL ID：200902173841198399   Reference number：97A0035822

Dependence of Optical and Electrical Properties of a-Si_1-xC_x:H Films on Thermal Annealing.

a-Si_1-xC_x:H膜における光学的および電気的特性の熱処理依存性

Author (3)： OKUBO TSUTOMU (東京電機大 工) ,  MOTOHASHI MITSUYA (東京電機大 工) ,  HONMA KAZUAKI (東京電機大 工)
Material： 電子情報通信学会論文誌 C-2  (Transactions of the Institute of Electronics, Information and Communication Engineers. C-2)
Volume： 79  Issue： 11  Page： 682-690  Publication year： Nov. 1996 
JST Material Number： L0196A  ISSN： 0915-1907  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： amorphous semiconductor ,...

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JST classification (1)： Semiconductor thin films  (BK14040E)

Reference (16)：

• HAMAKAWA, Y. JARECT 16 Amorphous Semiconductor Teconologies and Devices. 1984, 200-205
• LAU, S. P. a-SiC:H thin film visible lightemitting diodes with highly conductive wide band gap a-SiC: H as the carrier injection layers. J. Non-Cryst. Solids. 1993, 164-166, 813-816
• NAKAYAMA, Y. Two-way photocurrent multiplication in amorphous silicon carbide cells. J. Non-Cryst. Solids. 1991, 137&138, 1279-1282
• BAKER, S. H. Electronec and optical properties of a-Si_<1-x>C_x : H films prepared form a H_2-diluted mixture of SiH_4 and CH_4. Phil. Mag. B. 1990, 62, 213-223
• SOTIROPOULOS, J. Optical properties and structure of Si_<1-x>C_x : H alloys. J. Non-Cryst. Solids. 1987, 92, 95-106

Terms in the title (4)： 光学 ,  電気的特性 ,  熱処理 ,  依存性