Art
J-GLOBAL ID:200902174105339070   Reference number:99A0567330

Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic randon access memory(invited).

交換相互作用でバイアスした磁気トンネル接合とその不揮発性磁気ランダムアクセスメモリへの応用(招待)
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Material:
Volume: 85  Issue: 8, Pt.2B  Page: 5828-5833  Publication year: Apr. 15, 1999 
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Category name(code) classified by JST.
Metal-insulator-metal structures  ,  Magnetoelectric devices  ,  Hydrid integrated circuit 

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