Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic randon access memory(invited).

PARKIN S S P; ROCHE K P; SAMANT M G; RICE P M; BEYERS R B; SCHEUERLEIN R E; O'SULLIVAN E J; BROWN S L; GALLAGHER W J

Art

J-GLOBAL ID：200902174105339070 Reference number：99A0567330

Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic randon access memory(invited).

交換相互作用でバイアスした磁気トンネル接合とその不揮発性磁気ランダムアクセスメモリへの応用(招待)

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Material：
Volume： 85 Issue： 8, Pt.2B Page： 5828-5833 Publication year： Apr. 15, 1999
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Metal-insulator-metal structures , Magnetoelectric devices , Hydrid integrated circuit

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