InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy.

KURAMATA A; DOMEN K; SOEJIMA R; HORINO K; KUBOTA S; TANAHASHI T

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J-GLOBAL ID：200902174159298329 Reference number：97A0934939

InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy.

低圧有機金属気相エピタクシーを用いて6H-SiC基板上に成長させたInGaNレーザダイオード

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Material：
Volume： 36 Issue： 9A/B Page： L1130-L1132 Publication year： Sep. 15, 1997
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor lasers

Reference (10)：

NAKAMURA, S. Jpn. J. Appl. Phys. 1996, 35, L74
AKASAKI, I. Electron. Lett. 1996, 32, 1105
ITAYA, K. Jpn. J. Appl. Phys. 1996, 35, L1315
NAKAMURA, S. Appl. Phys. Lett. 1996, 69, 3034
ZUBRILOV, A. S. Appl. Phys. Lett. 1995, 67, 533

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