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J-GLOBAL ID：200902175242162265
Reference number：99A0050735
Morphology Control of Cu Clusters Formed on H-Si(111) Surface in Solution by Si Potential.
溶液中のH-Si(111)表面上で形成されるCuクラスタのSiポテンシャルによる形態制御
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Author (2)：
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Material：
Volume：
37
Issue：
11A
Page：
L1333-L1335
Publication year：
Nov. 01, 1998
JST Material Number：
F0599B
ISSN：
0021-4922
Document type：
Article
Article type：
短報
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Atomic and molecular clusters
Reference (7)：
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1) D. H. Huang and M. Aono: J. Vac. Sci. & Technol. B<b>12</b> (1994) 2429
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2) K. Uemura and K. Shimanoe: Proc. Fourth Int. Symp. Cleaning Technology in Semiconductor Device Manufacturing, eds. R. E. Novak and J. Ruzyllo (Electrochem. Soc, New Jersey, 1996) p. 292.
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3) K. Hara and I. Ohdomari: to be published in IEICE-C [in Japanese].
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4) A. J. Bard and L. R. Faulkner: <i>Electrochemical Methods</i> (John Wiley & Sons, NY, 1980) p. 637.
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5) T. Ogino, H. Hibino and Y. Homma: Jpn. J. Appl. Phys. 34 (1995) L668
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