Art
J-GLOBAL ID：200902177740943013
Reference number：95A0555127
Dielectric degradation models of gate oxide film contaminated with carbon compounds.
炭素化合物汚染による酸化膜耐圧劣化要因の検討
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Author (3)：
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Material：
Volume：
42nd
Issue：
Pt 2
Page：
704
Publication year：
Mar. 1995
JST Material Number：
Y0054A
Document type：
Proceedings
Country of issue：
Japan (JPN)
Language：
JAPANESE (JA)
Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
,
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