Art
J-GLOBAL ID：200902177820087509
Reference number：96A0487849
Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing.
重水素処理による金属-酸化物-半導体トランジスタにおけるホットエレクトロン劣化の低減
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Author (3)：
,
,
Material：
Volume：
68
Issue：
18
Page：
2526-2528
Publication year：
Apr. 29, 1996
JST Material Number：
H0613A
ISSN：
0003-6951
CODEN：
APPLAB
Document type：
Article
Article type：
短報
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
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Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Metal-insulator-semiconductor structures
, Transistors
Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
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,
,
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