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J-GLOBAL ID：200902178020001343
Reference number：00A0808494
Improved Stability of Metal-Insulator-Diamond Semiconductor Interface by Employing CaF2/Thin BaF2 Composite Insulator Film.
CaF2/薄膜BaF2複合絶縁膜の採用による金属-絶縁体-ダイヤモンド半導体界面の安定性の改善
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Author (5)：
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Material：
Volume：
39
Issue：
8
Page：
4755-4756
Publication year：
Aug. 15, 2000
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
短報
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Metal-insulator-semiconductor structures
Reference (12)：
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1) D. L. Dreifus, A. J. Tessmer, J. S. Holmes, C. T. Kao, D. M. Malta, L. S. Plano and B. R. Stoner: Mater. Res. Soc. Symp. Proc. 339 (1994) 109.
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2) G. Sh. Gildenbat, S. A. Grot, C. W. Hatfield and A. R. Badzian: IEEE Electron Device Lett. 12 (1991) 37.
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3) C. R. Zeisse, C. A. Hewett, R. Nguyen, J. R. Zeidler and R. G. Wilson: IEEE Electron Device Lett. 12 (1991) 602.
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4) M. W. Geis, D. D. Rathman, D. J. Ehrlich, R. A. Murphy and W. T. Lindley: IEEE Electron Device Lett. 8 (1987) 341.
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5) Y. Otsuka, S. Suzuki, S. Shikama, T. Maki and T. Kobayashi: Jpn. J. Appl. Phys. 34 (1995) L551.
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Terms in the title (9)：
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