Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film.

UCHIDA K; KOGA J; OHBA R; TAKAGI S; TORIUMI A

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J-GLOBAL ID：200902178134228429 Reference number：01A0989526

Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film.

うねりのある極めて薄いSOI構造薄膜中に作製したシリコン単一電子トンネル素子

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Author (5)： , , , ,
Material：
Volume： 90 Issue： 7 Page： 3551-3557 Publication year： Oct. 01, 2001
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures

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