Art
J-GLOBAL ID：200902180295291400   Reference number：94A0546725

Production of β-SiC buffer layers for CVD diamond thin films by ion implantation.

イオン注入法によるCVDダイヤモンド薄膜に対するβ-SiC緩衝層の合成
Author (2)：
VON MUENCH W

About VON MUENCH W

(Univ. Stuttgart, Stuttgart, DEU)

About Univ. Stuttgart, Stuttgart, DEU

, 
WIEBACH S

About WIEBACH S

(Univ. Stuttgart, Stuttgart, DEU)

About Univ. Stuttgart, Stuttgart, DEU


Material：
Diamond and Related Materials  (Diam Relat Mater)

About Diamond and Related Materials


Volume： 3  Issue： 4/6  Page： 500-505  Publication year： Apr. 1994 
JST Material Number： W0498A  ISSN： 0925-9635  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)
Thesaurus term：
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silicon carbide

About silicon carbide

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
CVD【化学蒸着】

About CVD【化学蒸着】


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JST classification (1)：
JST classification
Category name(code) classified by JST.
Carbon and its compounds 
(YB02060D)

About Carbon and its compounds

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
イオン注入法

About イオン注入法

, 
CVD

About CVD

, 
ダイヤモンド薄膜

About ダイヤモンド薄膜

, 
SiC

About SiC

, 
緩衝層

About 緩衝層


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