Charge-Trap Memory Device Fabricated by Oxidation of Si<sub>1-x</sub>Ge<sub>x</sub>.

KING Y-C; KING T-J; HU C

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J-GLOBAL ID：200902180408115035 Reference number：01A0628646

Charge-Trap Memory Device Fabricated by Oxidation of Si_1-xGe_x.

Si_1-xGe_xの酸化により作製した電荷捕獲メモリ

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Author (3)： , ,
Material：
Volume： 48 Issue： 4 Page： 696-700 Publication year： Apr. 2001
JST Material Number： C0222A ISSN： 0018-9383 CODEN： IETDAI Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Transistors , Memory units

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Charge-Trap Memory Device Fabricated by Oxidation of Si1-xGex.

Charge-Trap Memory Device Fabricated by Oxidation of Si_1-xGe_x.