Art

J-GLOBAL ID：200902180420029446   Reference number：93A0761694

Transparent and conductive GaN thin films prepared by an electron cyclotron resonance plasma metalorganic chemical vapor deposition method.

Author (5)： SATO H (Kanazawa Inst. Technology, Ishikawa, JPN) ,  MINAMI T (Kanazawa Inst. Technology, Ishikawa, JPN) ,  YAMADA E (Kanazawa Inst. Technology, Ishikawa, JPN) ,  TAKATA S (Kanazawa Inst. Technology, Ishikawa, JPN) ,  ISHII M (Kanazawa Inst. Technology, Ishikawa, JPN)
Material： Journal of Vacuum Science & Technology. A. Vacuum, Surfaces and Films  (Journal of Vacuum Science and Technology. A. Vacuum, Surfaces, and Films)
Volume： 11  Issue： 4 Pt 1  Page： 1422-1425  Publication year： Jul. 1993 
JST Material Number： C0789B  ISSN： 0734-2101  CODEN： JVTAD6  Document type： Article
Country of issue： United States (USA)  Language： ENGLISH (EN)

Terms in the title (1)： GaN