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J-GLOBAL ID:200902181297935077   Reference number:98A0198314

Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces.

Si(001)面の初期の層毎の酸化の速度論
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Material:
Volume: 80  Issue:Page: 345-348  Publication year: Jan. 12, 1998 
JST Material Number: H0070A  ISSN: 0031-9007  CODEN: PRLTAO  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Surface structure of semiconductors  ,  Other noncatalytic reactions 
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