Art

J-GLOBAL ID：200902181579141979   Reference number：97A0109015

Millimeter-wave Short-range Application Systems Technology. Recent Advance of Millimeter Wave Technology in Japan.

日本におけるミリ波技術の最近の進歩

Author (2)： YONEYAMA T (Tohoku Univ., Sendai-shi, JPN) ,  HONJO K (NEC Corp., Tsukuba-shi, JPN)
Material： IEICE Transactions on Communications (Institute of Electronics, Information and Communication Engineers)  (IEICE Trans Commun (Inst Electron Inf Commun Eng))
Volume： E79-B  Issue： 12  Page： 1729-1740  Publication year： Dec. 1996 
JST Material Number： L1369A  ISSN： 0916-8516  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： millimeter wave communication ,...

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JST classification (1)： Microwave and millimeterwave communication  (ND08020W)

Reference (37)：

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• SAMOTO, N. sub-0.1μm T-shaped gate fabrication technology using mixing-layer sidewalls in a double-layer resist system. J. Vac. Sci. Technol. B. 1994, 12, 6, 3673-3676
• FENG, M. On the speed and noise performance of direction implanted GaAs MESFET's. IEEE Trans. ED. 1993, 40, 9-17
• ONODERA, K. High microwave and ultra-low noise performance of fully ion implanted GaAs MESFET's with Au/WSiN T shaped gate. IEEE Trans. ED. 1993, 40, 18-24
• CHAO, P. C. DC and microwave characteristics of sub-0.1μm gate-length planar-doped pseudomorphic HEMT's. IEEE Trans. ED. 1989, 36, 3, 461-473

Terms in the title (2)： 日本 ,  ミリ波