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J-GLOBAL ID：200902182046941902   Reference number：02A0594422

Precursor to surface melting of Si(111) at high temperature.

高温のSi(111)表面融解に対する前駆体
Author (2)：
FUKAYA Y

About FUKAYA Y

(Yokohama City Univ., Yokohama, JPN)

About Yokohama City Univ., Yokohama, JPN

, 
SHIGETA Y

About SHIGETA Y

(Yokohama City Univ., Yokohama, JPN)

About Yokohama City Univ., Yokohama, JPN


Material：
Physical Review. B. Condensed Matter and Materials Physics  (Physical Review. B. Condensed Matter)

About Physical Review. B. Condensed Matter and Materials Physics


Volume： 65  Issue： 19  Page： 195415.1-195415.8  Publication year： May. 15, 2002 
JST Material Number： D0746A  ISSN： 1098-0121  CODEN： PRBMDO  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
*silicon

About silicon

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Surface structure of semiconductors 
(BK15030A)

About Surface structure of semiconductors

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
Si

About Si

, 
表面融解

About 表面融解

, 
前駆体

About 前駆体


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