Selective growth of wurtzite GaN and Al<sub>x</sub>Ga<sub>1-x</sub>N on GaN/sapphire substrates by metalorganic vapor phase epitaxy.

KATO Y; KITAMURA S; HIRAMATSU K; SAWAKI N

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J-GLOBAL ID：200902182085833742 Reference number：95A0139295

Selective growth of wurtzite GaN and Al_xGa_1-xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy.

GaN/サファイア基板上のウルツ鉱型GaNとAl_xGa_1-xNの選択的成長

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Volume： 144 Issue： 3/4 Page： 133-140 Publication year： Dec. 1994
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Semiconductor thin films

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Selective growth of wurtzite GaN and AlxGa1-xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy.

Selective growth of wurtzite GaN and Al_xGa_1-xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy.