Art
J-GLOBAL ID:200902182085833742   Reference number:95A0139295

Selective growth of wurtzite GaN and AlxGa1-xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy.

GaN/サファイア基板上のウルツ鉱型GaNとAlxGa1-xNの選択的成長
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Volume: 144  Issue: 3/4  Page: 133-140  Publication year: Dec. 1994 
JST Material Number: B0942A  ISSN: 0022-0248  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Semiconductor thin films 
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