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J-GLOBAL ID:200902182681435487   Reference number:01A0162855

Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application.

Si上に直接堆積したゲート絶縁体用ZrO2の電気及び信頼特性
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Volume: 77  Issue: 20  Page: 3269-3271  Publication year: Nov. 13, 2000 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Dielectrics in general  ,  Materials of solid-state devices 
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