Art
J-GLOBAL ID：200902182827488235
Reference number：97A0950318
Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters.
III族窒化物半導体の結晶成長と伝導度制御およびその短波長発光素子への応用
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Author (2)：
,
Material：
Volume：
36
Issue：
9A
Page：
5393-5408
Publication year：
Sep. 1997
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
文献レビュー
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (3)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films
, Semiconductor lasers
, Light emitting devices
Reference (92)：
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MARUSKA, H. P. Appl.Phys.Lett. 1969, 15, 327
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PANKOVE, J. I. J.Lumin. 1971, 4, 63
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MARUSKA, H. P. Mater.Res.Bull. 1971, 7, 777
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AKASAKI, I. Kogyo Gijutsu. 1976, 17, 48
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OHKI, Y. Inst.Phys.Conf.Ser. 1981, 63, 479
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