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J-GLOBAL ID:200902183028442172   Reference number:01A0192151

Characterization of Silicon Carbide(SiC) Epitaxial Channel MOSFETs.

炭化けい素(SiC)エピタキシャルチャネルMOSFETの特性評価
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Volume: 47  Issue: 11  Page: 2214-2220  Publication year: Nov. 2000 
JST Material Number: C0222A  ISSN: 0018-9383  CODEN: IETDAI  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Transistors 
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