Art
J-GLOBAL ID：200902183028442172   Reference number：01A0192151

Characterization of Silicon Carbide(SiC) Epitaxial Channel MOSFETs.

炭化けい素(SiC)エピタキシャルチャネルMOSFETの特性評価
Author (2)：
WAGNER W E III

About WAGNER W E III

(Lucent Technol., PA, USA)

About Lucent Technol., PA, USA

, 
WHITE M H

About WHITE M H

(Lehigh Univ., PA, USA)

About Lehigh Univ., PA, USA


Material：
IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)

About IEEE Transactions on Electron Devices


Volume： 47  Issue： 11  Page： 2214-2220  Publication year： Nov. 2000 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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*MOSFET

About MOSFET

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
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All keywords is available on JDreamIII(charged).
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チャネル【半導体】

About チャネル【半導体】


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JST classification (1)：
JST classification
Category name(code) classified by JST.
Transistors 
(NC03070N)

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Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
炭化けい素

About 炭化けい素

, 
SiC

About SiC

, 
MOSFET

About MOSFET

, 
特性評価

About 特性評価


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