Dry etch damage in InN, InGaN, and InAlN.

PEARTON S J; LEE J W; MACKENZIE J D; ABERNATHY C R; SHUL R J

Art

J-GLOBAL ID：200902186014808769 Reference number：95A0954341

Dry etch damage in InN, InGaN, and InAlN.

InN,InGaN及びInAlNにおけるドライエッチング損傷

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Author (5)： , , , ,
Material：
Volume： 67 Issue： 16 Page： 2329-2331 Publication year： Oct. 16, 1995
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Applications of plasma , Irradiational changes semiconductors

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