Real-space investigation of initial growth process of hydrogenated amorphous silicon on a graphite substrate.

MATSUSE M; TSUBOI S; KAWASAKI M; KOINUMA H; EGUCHI M; SAKATA H

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J-GLOBAL ID：200902186452436491 Reference number：96A0559305

Real-space investigation of initial growth process of hydrogenated amorphous silicon on a graphite substrate.

グラファイト基板上の水素化非晶質シリコンの初期成長過程の実空間研究

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Author (6)： , , , , ,
Material：
Volume： 53 Issue： 19 Page： 12585-12588 Publication year： May. 15, 1996
JST Material Number： D0746A ISSN： 1098-0121 CODEN： PRBMDO Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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