Art

J-GLOBAL ID：200902188329411061   Reference number：01A0982309

Characterization of inductively coupled plasma etched surface of GaN using Cl₂/BCl₃ chemistry.

Cl₂/BCl₃化学を用いて誘導結合プラズマエッチングしたGaN表面の特性

Author (5)： TRIPATHY S (National Univ. Singapore, Singapore) ,  RAMAM A (Inst. Materials Res. and Engineering, Singapore, SGP) ,  CHUA S J (Inst. Materials Res. and Engineering, Singapore, SGP) ,  PAN J S (Inst. Materials Res. and Engineering, Singapore, SGP) ,  HUAN A (Inst. Materials Res. and Engineering, Singapore, SGP)
Material： Journal of Vacuum Science & Technology. A. Vacuum, Surfaces and Films  (Journal of Vacuum Science and Technology. A. Vacuum, Surfaces, and Films)
Volume： 19  Issue： 5  Page： 2522-2532  Publication year： Sep. 2001 
JST Material Number： C0789B  ISSN： 0734-2101  CODEN： JVTAD6  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *gallium nitride ,...

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JST classification (2)： Applications of plasma  (BJ02110K) ,  Manufacturing technology of solid-state devices  (NC03030V)

Terms in the title (5)： BCl3 ,  化学 ,  誘導結合プラズマ ,  エッチング ,  GaN