Composition dependence of room temperature 1.54μm Er<sup>3+</sup> luminescence from erbium-doped silicon: oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition.

SHIN J H; KIM M-J; SEO S-Y; LEE C

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J-GLOBAL ID：200902189745522243 Reference number：98A0349005

Composition dependence of room temperature 1.54μm Er³⁺ luminescence from erbium-doped silicon: oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition.

電子サイクロトロン共鳴プラズマ促進化学蒸着で成長させたエルビウムドープシリコン酸素薄膜からの室温における1.54μmのEr³⁺発光の組成依存性

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Volume： 72 Issue： 9 Page： 1092-1094 Publication year： Mar. 02, 1998
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Luminescence of semiconductors

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Composition dependence of room temperature 1.54μm Er3+ luminescence from erbium-doped silicon: oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition.

Composition dependence of room temperature 1.54μm Er³⁺ luminescence from erbium-doped silicon: oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition.