InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets.

NAKAMURA S; SENOH M; NAGAHAMA S; IWASA N; YAMADA T; MATSUSHITA T; KIYOKU H; SUGIMOTO Y

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J-GLOBAL ID：200902190813355618 Reference number：96A0286518

InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets.

へき開反射鏡共振器端面を有するInGaN多重量子井戸構造レーザダイオード

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Material：
Volume： 35 Issue： 2B Page： L217-L220 Publication year： Feb. 15, 1996
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor lasers

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