Formation of silicon islands on a silicon on insulator substrate upon thermal annealing.

LEGRAND B; AGACHE V; NYS J P; SENEZ V; STIEVENARD D

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J-GLOBAL ID：200902191576449200 Reference number：00A0641937

Formation of silicon islands on a silicon on insulator substrate upon thermal annealing.

熱アニーリングをした時の絶縁体上けい素基板上のけい素島状構造の形成

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Author (5)： , , , ,
Material：
Volume： 76 Issue： 22 Page： 3271-3273 Publication year： May. 29, 2000
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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