Interfacial reaction between chemically vapor-deposited HfO<sub>2</sub> thin films and a HF-cleaned Si substrate during flim growth and postannealing.

PARK B K; PARK J; CHO M; HWANG C S; OH K; HAN Y; YANG D Y

Art

J-GLOBAL ID：200902192785837680 Reference number：02A0328530

Interfacial reaction between chemically vapor-deposited HfO₂ thin films and a HF-cleaned Si substrate during flim growth and postannealing.

薄膜成長および後アニーリングの間における,化学蒸着HfO₂薄膜とHF清浄化シリコン基板との間での界面反応

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=02A0328530&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=02A0328530&from=J-GLOBAL&jstjournalNo=H0613A") }}

Author (7)： , , , , , ,
Material：
Volume： 80 Issue： 13 Page： 2368-2370 Publication year： Apr. 01, 2002
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

,...
,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=02A0328530&from=J-GLOBAL&jstjournalNo=H0613A") }}

Oxide thin films , Other noncatalytic reactions

, , , , , , , ,

Return to Previous Page

Interfacial reaction between chemically vapor-deposited HfO2 thin films and a HF-cleaned Si substrate during flim growth and postannealing.

Interfacial reaction between chemically vapor-deposited HfO₂ thin films and a HF-cleaned Si substrate during flim growth and postannealing.