Interfacial reaction between chemically vapor-deposited HfO<sub>2</sub> thin films and a HF-cleaned Si substrate during flim growth and postannealing.

PARK B K; PARK J; CHO M; HWANG C S; OH K; HAN Y; YANG D Y

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J-GLOBAL ID：200902192785837680 Reference number：02A0328530

Interfacial reaction between chemically vapor-deposited HfO₂ thin films and a HF-cleaned Si substrate during flim growth and postannealing.

薄膜成長および後アニーリングの間における,化学蒸着HfO₂薄膜とHF清浄化シリコン基板との間での界面反応

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Author (7)： , , , , , ,
Material：
Volume： 80 Issue： 13 Page： 2368-2370 Publication year： Apr. 01, 2002
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Oxide thin films , Other noncatalytic reactions

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Interfacial reaction between chemically vapor-deposited HfO2 thin films and a HF-cleaned Si substrate during flim growth and postannealing.

Interfacial reaction between chemically vapor-deposited HfO₂ thin films and a HF-cleaned Si substrate during flim growth and postannealing.