Art

J-GLOBAL ID：200902194346073960   Reference number：93A0423323

Growth of large SiC single crystals.

Author (7)： BARRETT D L (Westinghouse Science and Technology Center, Pennsylvania, USA) ,  MCHUGH J P (Westinghouse Science and Technology Center, Pennsylvania, USA) ,  HOBGOOD H M (Westinghouse Science and Technology Center, Pennsylvania, USA) ,  HOPKINS R H (Westinghouse Science and Technology Center, Pennsylvania, USA) ,  MCMULLIN P G (Westinghouse Science and Technology Center, Pennsylvania, USA) ,  CLARKE R C (Westinghouse Science and Technology Center, Pennsylvania, USA) ,  CHOYKE W J (Univ. Pittsburgh, Pennsylvania, USA)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 128  Issue： 1/4 Pt 1  Page： 358-362  Publication year： Mar. 1993 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Terms in the title (1)： SiC