Stacking effect of self-organized In<sub>0.15</sub>Ga<sub>0.85</sub>As quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy.

OHNO Y; NITTA T; SHIMOMURA S; HIYAMIZU S

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J-GLOBAL ID：200902194387394568 Reference number：01A0690717

Stacking effect of self-organized In_0.15Ga_0.85As quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy.

分子ビームエピタクシーによって(775)B方位GaAs基板上に成長させた自己組織化In_0.15Ga_0.85As量子細線の積層効果

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Author (4)： , , ,
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Volume： 227/228 Page： 970-974 Publication year： Jul. 2001
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Semiconductor-semiconductor contacts with Gr.13-15 element compounds , Luminescence of semiconductors , Semiconductor thin films

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Stacking effect of self-organized In0.15Ga0.85As quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy.

Stacking effect of self-organized In_0.15Ga_0.85As quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy.