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J-GLOBAL ID:200902195457840109   Reference number:03A0088510

Thermally Stable CVD HfOxNy Advanced Gate Dielectrics with Poly-Si Gate Electrode.

ポリシリコンゲート電極を有する熱安定なCVDによるHFOxNyの改良されたゲート誘電体
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Volume: 2002  Page: 857-860  Publication year: 2002 
JST Material Number: C0829B  ISSN: 0163-1918  Document type: Proceedings
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Transistors 
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