Thermally Stable CVD HfO<sub>x</sub>N<sub>y</sub> Advanced Gate Dielectrics with Poly-Si Gate Electrode.

CHOI C H; RHEE S J; JEON T S; LU N; SIM J H; CLARK R; NIWA M; KWONG D L

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J-GLOBAL ID：200902195457840109 Reference number：03A0088510

Thermally Stable CVD HfO_xN_y Advanced Gate Dielectrics with Poly-Si Gate Electrode.

ポリシリコンゲート電極を有する熱安定なCVDによるHFO_xN_yの改良されたゲート誘電体

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Author (8)： , , , , , , ,
Material：
Volume： 2002 Page： 857-860 Publication year： 2002
JST Material Number： C0829B ISSN： 0163-1918 Document type： Proceedings
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Thermally Stable CVD HfOxNy Advanced Gate Dielectrics with Poly-Si Gate Electrode.

Thermally Stable CVD HfO_xN_y Advanced Gate Dielectrics with Poly-Si Gate Electrode.