Nanometer-scale electrical characterization of stressed ultrathin SiO<sub>2</sub> films using conducting atomic force microscopy.

PORTI M; NAFRIA M; AYMERICH X; OLBRICH A; EBERSBERGER B

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J-GLOBAL ID：200902195521905228 Reference number：01A0743525

Nanometer-scale electrical characterization of stressed ultrathin SiO₂ films using conducting atomic force microscopy.

導電性原子間力顕微鏡を利用して電気的ストレスを印加した極薄SiO₂膜のナノスケール電気特性評価

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Author (5)： , , , ,
Material：
Volume： 78 Issue： 26 Page： 4181-4183 Publication year： Jun. 25, 2001
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Oxide thin films , Electric conduction in semiconductors and insulators in general

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Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy.

Nanometer-scale electrical characterization of stressed ultrathin SiO₂ films using conducting atomic force microscopy.