Art
J-GLOBAL ID：200902195577137126
Reference number：96A0443759
Single Electron Device with Asymmetric Tunnel Barriers.
非対称トンネル障壁を持つ単一電子デバイス
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Author (4)：
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Material：
Volume：
35
Issue：
2B
Page：
1126-1131
Publication year：
Feb. 1996
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Electrical properties of interfaces in general
Reference (8)：
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AVERIN, D. V. J.Low Temp.Phys. 1985, 62, 345
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Single Charge Tnneling. 1992
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YANO, K. Ext.Abst.1994 Int.Conf.Solid State Devices and Materials. 1994, 325
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LUTWYCHE, M. I. J.Appl.Phys. 1994, 75, 3654
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AMEMIYA, Y. Oyo Buturi. 1995, 64, 765
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