High electron mobility transistor based on a GaN-Al<sub>x</sub>Ga<sub>1-x</sub>N heterojunction.

KHAN M A; BHATTARAI A; KUZNIA J N; OLSON D T

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J-GLOBAL ID：200902196112628561 Reference number：93A0811222

High electron mobility transistor based on a GaN-Al_xGa_1-xN heterojunction.

GaN-Al_xGa_1-xNヘテロ接合に基づく高電子移動度トランジスタ

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Volume： 63 Issue： 9 Page： 1214-1215 Publication year： Aug. 30, 1993
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Transistors , Semiconductor-semiconductor contacts with Gr.13-15 element compounds

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High electron mobility transistor based on a GaN-AlxGa1-xN heterojunction.

High electron mobility transistor based on a GaN-Al_xGa_1-xN heterojunction.