Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique.

SHI Y; XIE Z Y; LIU L H; LIU B; EDGAR J H; KUBALL M

Art

J-GLOBAL ID：200902196548328962 Reference number：01A0914453

Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique.

昇華サンドイッチ法で成長させたAlNの核形成に及ぼすバッファ層および6H-SiC基板極性の影響

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Author (6)： , , , , ,
Material：
Volume： 233 Issue： 1/2 Page： 177-186 Publication year： Nov. 2001
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Semiconductor thin films

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