Intense erbium-1.54-μm photoluminescence from 2 to 525K in ion-implanted 4H, 6H, 15R, and 3C SiC.

CHOYKE W J; DEVATY R P; CLEMEN L L; YOGANATHAN M; PENSL G; HAESSLER C

Art

J-GLOBAL ID：200902196844508739 Reference number：94A0872088

Intense erbium-1.54-μm photoluminescence from 2 to 525K in ion-implanted 4H, 6H, 15R, and 3C SiC.

イオン注入した4H,6H,15R,3C SiCにおける2~525Kで強いエルビウム1.54μm光ルミネセンス

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Material：
Volume： 65 Issue： 13 Page： 1668-1670 Publication year： Sep. 26, 1994
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Luminescence of semiconductors , Irradiational changes semiconductors

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