Influence of 4H-SiC Growth Conditions on Micropipe Dissociation.

KAMATA I; TSUCHIDA H; JIKIMOTO T; IZUMI K

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J-GLOBAL ID：200902198377714950 Reference number：02A0920337

Influence of 4H-SiC Growth Conditions on Micropipe Dissociation.

ミクロパイプ解離の4H-SiC成長条件が及ぼす影響

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Material：
Volume： 41 Issue： 10B Page： L1137-L1139 Publication year： Oct. 15, 2002
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Lattice defects in semiconductors , Semiconductor thin films

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4) R. Yakimova, M. Tuominen, A. S. Bakin, J.-O. Fornell, A. Vehanen and E. Janzen: Inst. Phys. Conf. Ser. 142 (1996) 101.
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