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J-GLOBAL ID:200902199668010744   Reference number:02A0698135

Anomalous Large Thermoelectric Power on Heavily B-Doped SiGe Thin Films with Thermal Annealing.

高濃度BドープしたSiGe薄膜の熱アニーリングによる異常に大きい熱起電力
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Volume: 41  Issue: 8B  Page: L949-L951  Publication year: Aug. 15, 2002 
JST Material Number: F0599B  ISSN: 0021-4922  Document type: Article
Article type: 短報  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Electric conduction in crystalline semiconductors 
Reference (12):
  • 1) H. J. Goldsmid: Electronic Refrigeration (Pion, London, 1986).
  • 2) R. M. Ware and D. J. McNeil: Proc. IEE (1964) 178.
  • 3) L. D. Hicks and M. S. Dresselhaus: Phys. Rev. B 47 (1993) 12727.
  • 4) N. B. Elsner, S. Ghamaty, J. H. Norman, J. C. Farmer, R. J. Foreman, L. J. Summers, M. L. Olsen, P. E. Thompson and K. Wang: Proc. 14th Int. Conf. Thermoelectrics (Am. Inst. Phys., New York, 1995) p. 328.
  • 5) H. Kato, A. Yamamoto, M. Takimoto, T. Ohta, K. Sakamoto, K. Miki, L. Whitlow, K. Kamisako and T. Matsui: Proc. 17th Int. Conf. Thermoelectrics (IEEE, Piscataway, 1998) p. 253.
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