Defect reduction in (11<span style=text-decoration:overline>2</span>0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

HASKELL B A; WU F; CRAVEN M D; MATSUDA S; FINI P T; FUJII T; FUJITO K; DENBAARS S P; SPECK J S

Art

J-GLOBAL ID：200902201053326622 Reference number：03A0534405

Defect reduction in (11<span style=text-decoration:overline>2</span>0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

水素化物気相エピタクシーによるエピタキシャル横方向被覆成長による(11-20)a面窒化ガリウムの欠陥減少

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Author (9)： , , , , , , , ,
Material：
Volume： 83 Issue： 4 Page： 644-646 Publication year： Jul. 28, 2003
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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