Art

J-GLOBAL ID：200902201363628548   Reference number：07A0515045

Observation of cross-sectional electric field for GaN-based field effect transistor with field-modulating plate

場変調板を有するGaNベース電界効果トランジスタに関する断面電場の観測

Author (8)： WAKEJIMA Akio (Res. and Dev. Assoc. for Future Electron Devices, c/o NEC Corp., 2-9-1 Seiran, Otsu, Shiga 520-0833, JPN) ,  OTA Kazuki (Res. and Dev. Assoc. for Future Electron Devices, c/o NEC Corp., 2-9-1 Seiran, Otsu, Shiga 520-0833, JPN) ,  NAKAYAMA Tatsuo (Res. and Dev. Assoc. for Future Electron Devices, c/o NEC Corp., 2-9-1 Seiran, Otsu, Shiga 520-0833, JPN) ,  ANDO Yuji (Res. and Dev. Assoc. for Future Electron Devices, c/o NEC Corp., 2-9-1 Seiran, Otsu, Shiga 520-0833, JPN) ,  OKAMOTO Yasuhiro (Res. and Dev. Assoc. for Future Electron Devices, c/o NEC Corp., 2-9-1 Seiran, Otsu, Shiga 520-0833, JPN) ,  MIYAMOTO Hironobu (Res. and Dev. Assoc. for Future Electron Devices, c/o NEC Corp., 2-9-1 Seiran, Otsu, Shiga 520-0833, JPN) ,  KAMIYA Shinichi (Res. and Dev. Assoc. for Future Electron Devices, c/o Ritsumeikan Univ., 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 ...) ,  SUZUKI Akira (Res. Organization of Sci. and Engineering, Ritsumeikan Univ., 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, JPN)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 90  Issue： 21  Page： 213504-213504-3  Publication year： May. 21, 2007 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *FET ,...
Semi thesaurus term： *field effect transistor ,...

   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=07A0515045&from=J-GLOBAL&jstjournalNo=H0613A") }}

JST classification (1)： Transistors  (NC03070N)

Terms in the title (6)： 場 ,  変調 ,  GaN ,  電界効果トランジスタ ,  電場 ,  観測