Art
J-GLOBAL ID：200902204353242691   Reference number：04A0365150

Thermodynamic considerations in the stability of binary oxides for alternative gate dielectrics in complementary metal-oxide-semiconductors

相補型金属-酸化膜-半導体の代替ゲート絶縁膜としての二元酸化物の安定性の熱力学的考察
Author (1)：
STEMMER S

About STEMMER S

(Univ. California, California)

About Univ. California, California


Material：
Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures  (Journal of Vacuum Science & Technology. B. Microelectronics Processing and Phenomena)

About Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures


Volume： 22  Issue： 2  Page： 791-800  Publication year： Mar. 2004 
JST Material Number： E0974A  ISSN： 1071-1023  CODEN： JVTBD9  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
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*CMOS structure

About CMOS structure

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
シリコン

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JST classification (2)：
JST classification
Category name(code) classified by JST.
Oxide thin films 
(BK14050P)

About Oxide thin films

,  Metal-insulator-semiconductor structures 
(BM03085X)

About Metal-insulator-semiconductor structures

Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
酸化膜

About 酸化膜

, 
代替

About 代替

, 
ゲート絶縁膜

About ゲート絶縁膜

, 
酸化物

About 酸化物

, 
安定性

About 安定性

, 
熱力学

About 熱力学


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