Art

J-GLOBAL ID：200902205134550387   Reference number：08A0383336

Electrical evidence of unstable anodic interface in Ru/HfO_x/TiN unipolar resistive memory

Ru/HfO_x/TiN単極抵抗メモリにおける不安定な陽極界面の電気的証拠

Author (9)： LEE Heng Yuan (Industrial Technol. Res. Inst., Hsinchu 310, Taiwan) ,  CHEN Pang Shiu (MingShin Univ. of Sci. and Technol., Hsinchu 304, Taiwan) ,  WU Tai Yuan (Industrial Technol. Res. Inst., Hsinchu 310, Taiwan) ,  WANG Ching Chiun (Industrial Technol. Res. Inst., Hsinchu 310, Taiwan) ,  TZENG Pei Jer (Industrial Technol. Res. Inst., Hsinchu 310, Taiwan) ,  LIN Cha Hsin (Industrial Technol. Res. Inst., Hsinchu 310, Taiwan) ,  CHEN Frederick (Industrial Technol. Res. Inst., Hsinchu 310, Taiwan) ,  TSAI Ming-jinn (Industrial Technol. Res. Inst., Hsinchu 310, Taiwan) ,  LIEN Chenhsin (Inst. of Electronics Engineering, National Tsing Hua Univ., Hsinchu 30013, Taiwan)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 92  Issue： 14  Page： 142911  Publication year： Apr. 07, 2008 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： stability ,  *nonvolatile memory ,  insulating film ,  *hafnium oxide ,  anode ,  Ruthenium ,  substrate (plate) ,  titanium compound ,  nitride ,  switching ,  electric resistance ,  permittivity ,  temperature dependence ,  frequency dependence ,  current-voltage characteristic ,  ohmic contact ,  tunnel effect ,  interface (surface) ,  conduction band ,  band-offset ,  instability ,  *MIM structure ,  resistance switching ,  frequency dispersion
Semi thesaurus term： 単安定 ,  *抵抗メモリ

JST classification (2)： Metal-insulator-metal structures  (BM03087F) ,  Other solid-state devices  (NC03150A)

Terms in the title (7)： Ru ,  TiN ,  極 ,  抵抗メモリ ,  陽極 ,  界面 ,  証拠