Art

J-GLOBAL ID：200902205884663620   Reference number：09A0830433

In-plane strain effects on dielectric properties of the HfO₂ thin film

HfO₂薄膜の誘電特性に及ぼす面内歪効果

Author (3)： WAKUI Sadakazu (Dep. of Electronic-Engineering, The Univ. of Electro-Communications (UEC-Tokyo), 1-5-1 Chofugaoka, Chofu, Tokyo ...) ,  NAKAMURA Jun (Dep. of Electronic-Engineering, The Univ. of Electro-Communications (UEC-Tokyo), 1-5-1 Chofugaoka, Chofu, Tokyo ...) ,  NATORI Akiko (Dep. of Electronic-Engineering, The Univ. of Electro-Communications (UEC-Tokyo), 1-5-1 Chofugaoka, Chofu, Tokyo ...)
Material： Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures  (Journal of Vacuum Science & Technology. B. Microelectronics Processing and Phenomena)
Volume： 27  Issue： 4  Page： 2020  Publication year： Jul. 2009 
JST Material Number： E0974A  ISSN： 1071-1023  CODEN： JVTBD9  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *hafnium oxide ,  dielectric thin film ,  *permittivity ,  *spatial distribution ,  lattice constant ,  symmetry ,  tetragonal system ,  cubic system ,  ground state ,  *lattice distortion ,  dielectric polarization ,  optical constant ,  external electric field ,  hydrogen terminated ,  *ab initio calculation
Semi thesaurus term： static dielectric constant

JST classification (3)： Oxide thin films  (BK14050P) ,  Dielectrics in general  (BM05010F) ,  Optical properties of condensed matter in general  (BM08010A)

Terms in the title (4)： HfO2 ,  薄膜 ,  誘電特性 ,  面内歪