Art
J-GLOBAL ID：200902206419693307
Reference number：03A0758233
Carrier recombination processes in GaN, AlGaN, and InGaN epilayers
GaN,AlGaNとInGaNエピ層におけるキャリア再結合過程
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Author (5)：
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Material：
Volume：
199
Issue：
2
Page：
347-354
Publication year：
Sep. 2003
JST Material Number：
D0774A
ISSN：
0031-8965
Document type：
Article
Article type：
原著論文
Country of issue：
Germany, Federal Republic of (DEU)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
JST classification (2)：
JST classification
Category name(code) classified by JST.
Luminescence of semiconductors
, Semiconductor thin films
Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
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