Art

J-GLOBAL ID：200902206491719000   Reference number：07A0157810

Thermal stability and electrical properties of titanium-aluminum oxide ultrathin films as high-k gate dielectric materials

高κゲート絶縁材料としてのチタン-アルミニウム酸化物の熱安定性と電気特性

Author (5)： SHI L. (Dep. of Material Sci. and Engineering, Nanjing Univ., Hankou Road 22, Nanjing 210093, People’s Republic of China ...) ,  XIA Y. D. (Dep. of Material Sci. and Engineering, Nanjing Univ., Hankou Road 22, Nanjing 210093, People’s Republic of China ...) ,  XU B. (Dep. of Material Sci. and Engineering, Nanjing Univ., Hankou Road 22, Nanjing 210093, People’s Republic of China ...) ,  YIN J. (Dep. of Material Sci. and Engineering, Nanjing Univ., Hankou Road 22, Nanjing 210093, People’s Republic of China ...) ,  LIU Z. G. (Dep. of Material Sci. and Engineering, Nanjing Univ., Hankou Road 22, Nanjing 210093, People’s Republic of China ...)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 101  Issue： 3  Page： 034102-034102-4  Publication year： Feb. 01, 2007 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： MOSFET ,...
Semi thesaurus term： anneal ,...

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JST classification (3)： Dielectrics in general  (BM05010F) ,  Oxide thin films  (BK14050P) ,  Metal-insulator-semiconductor structures  (BM03085X)

Terms in the title (7)： 高 ,  ゲート ,  絶縁材料 ,  チタン ,  アルミニウム酸化物 ,  熱安定性 ,  電気特性