Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition

KIPSHIDZE G; YAVICH B; CHANDOLU A; YUN J; KURYATKOV V; AHMAD I; AURONGZEB D; HOLTZ M; TEMKIN H

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J-GLOBAL ID：200902206961536773 Reference number：05A0197031

Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition

パルス性MOCVDによるGaNナノワイヤの制御成長

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Material：
Volume： 86 Issue： 3 Page： 033104.1-033104.3 Publication year： Jan. 17, 2005
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Atomic and molecular clusters , Crystal growth of semiconductors

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