Art

J-GLOBAL ID：200902207698263607   Reference number：06A0854151

Effects of Al ion implantation to 4H-SiC on the specific contact resistance of TiAl-based contact materials

接触材料の比接触抵抗に及ぼす4H-SiCへのAlイオン注入の効果

Author (3)： ITO Kazuhiro (Dep. of Materials Sci. and Engineering, Kyoto Univ., Kyoto 606-8501, JPN) ,  TSUKIMOTO Susumu (Dep. of Materials Sci. and Engineering, Kyoto Univ., Kyoto 606-8501, JPN) ,  MURAKAMI Masanori (Dep. of Materials Sci. and Engineering, Kyoto Univ., Kyoto 606-8501, JPN)
Material： Science and Technology of Advanced Materials  (Sci Technol Adv Mater)
Volume： 7  Issue： 6  Page： 496-501  Publication year： Sep. 2006 
JST Material Number： W1262A  ISSN： 1468-6996  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *contact resistance ,...
Semi thesaurus term： power device ,...

   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=06A0854151&from=J-GLOBAL&jstjournalNo=W1262A") }}

JST classification (1)： Electrical properties of interfaces in general  (BM03081H)

Reference (9)：

• Yu. A. Vodakov, E. N. Mokhov, in: R. C. Marshall, J. W. Faust Jr., C. E. Ryan (Eds.), Silicon Carbide 1973, University South Carolina Press, Columbia, 1974, p. 508.
• T. Troffer, M. Schadt, T. Frank, H. Ito, G. Pensl, et al., Phys. Stat. Sol. A 162(1997)277.
• H. Matsunami, T. Kimoto, Trans. IEICE J-85-C (2002)409.
• B. H. Tsao, S. Liu, J. Scofield, Mater. Sci. Forum 457-460(2004)841.
• A. Scorzoni, F. Moscatelli, A. Poggi, G. C. Cardinali, R. Nipoti, Mater. Sci. Forum 457-460(2004)881.

Terms in the title (5)： 接触材料 ,  比接触抵抗 ,  4H-SiC ,  Alイオン ,  注入