Doping properties of boron-doped microcrystalline silicon from B2H6 and BF3: material properties and solar cell performance

MATSUI T; KONDO M; MATSUDA A

Art

J-GLOBAL ID：200902209894229703 Reference number：04A0511944

Doping properties of boron-doped microcrystalline silicon from B₂H₆ and BF₃: material properties and solar cell performance

B₂H₆及びBF₃によるほう素ドープ微結晶シリコンのドーピング特性材料特性及び太陽電池性能

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=04A0511944&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=04A0511944&from=J-GLOBAL&jstjournalNo=D0642A") }}

Author (3)： , ,
Material：
Volume： 338/340 Page： 646-650 Publication year： Jun. 15, 2004
JST Material Number： D0642A ISSN： 0022-3093 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

,...
,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=04A0511944&from=J-GLOBAL&jstjournalNo=D0642A") }}

Semiconductor thin films , Semiconductor-semiconductor contacts without Gr.13-15 element compounds , Electrochemistry in general , Solar cell

, , , , , , , ,

Return to Previous Page